무선랜용 Q-대역 0.25㎛ pHEMT MMIC 저잡음증폭기 설계

Abstract

본 논문에서는 무선랜용 수신 시스템의 첫 단에 쓰이는 Q-대역 2단 MMIC 저잡음 증폭기를 설계하였다. 설계된 증폭기의 이득은 10.312±0.5㏈, 잡음지수는 2.677㏈이다. 입력 정재파비 VSWR_in = 1.072이고, 출력 정재파비 VSWR_out = 1.055이며, 1㏈ 이득압축점은 5.824㏈m IIP9는 13㏈m이다. 이번 저잡음 증폭기 설계에 사용된 pHEMT는 HP-EEsof사의 각각 0.25㎛×50㎛ 크기의 2-finger 루트모델이다. 제작을 위한 레이아웃은 칩사이즈가 1,800×1,500㎛이다 칩사이즈를 고려해서 바이어스딘의 λ/4 라인은 구부려서 구성하였으며 1단과 2단은 50Ω 정합을 하였다.

In this paper, the design of Q-band 0.25㎛ pHEMT MMIC 2-Stage Low Noise Amplifier for Wireless LAN is discussed. The LNA has a gain of 10.312±0.5㏈ and a noise figure of 2.677㏈. An input VSWR of the LNA is 1.072 and an output VSWR of the LNA is 1.055. 1㏈ gain compression point of the LNA is 5.824㏈m and IIP of the LNA is 13㏈m. In this paper, HP EEsof's pHEMT 2-finger ROOT Model of 0.25㎛×50㎛ is used. The layout chip size for manufacturing is 1,800㎛×1,500㎛. To reduce the size, a curved shape is adapted for λ/4-line realization. The first and second stage are matched to 50Ω.

In this paper, the design of Q-band 0.25㎛ pHEMT MMIC 2-Stage Low Noise Amplifier for Wireless LAN is discussed. The LNA has a gain of 10.312±0.5㏈ and a noise figure of 2.677㏈. An input VSWR of the LNA is 1.072 and an output VSWR of the LNA is 1.055. 1㏈ gain compression point of the LNA is 5.824㏈m and IIP of the LNA is 13㏈m. In this paper, HP EEsof's pHEMT 2-finger ROOT Model of 0.25㎛×50㎛ is used. The layout chip size for manufacturing is 1,800㎛×1,500㎛. To reduce the size, a curved shape is adapted for λ/4-line realization. The first and second stage are matched to 50Ω.