Comprehensive Research of Total Ionizing Dose Effects in GaN-based MIS-HEMTs using Extremely Thin Gate Dielectric Layer
- Publisher
- NANOMATERIALS
- Language
- 영어
- ISSN
- 2079-4991
- Citation Volume
- 10
- Citation Number
- 11
- Citation Start Page
- 2175
- Citation End Page
- 2175
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- Engineering > IT Convergence
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