Comprehensive Research of Total Ionizing Dose Effects in GaN-based MIS-HEMTs using Extremely Thin Gate Dielectric Layer
- Issued Date
- 2020
- Type
- Article
- Keyword
- GaN; SiN; HfO2; gate insulator; MIS-HEMT; total ionizing dose effect; γ-ray; radiation
- Publisher
- NANOMATERIALS
- Language
- 영어
- ISSN
- 2079-4991
- Citation Volume
- 10
- Citation Number
- 11
- Citation Start Page
- 2175
- Citation End Page
- 2175
- Appears in Collections:
- Engineering > IT Convergence
- Files in This Item:
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