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Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-layer Al2O3 and Bi-layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress

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Publisher
ELECTRONICS
Language
영어
ISSN
2079-9292
Citation Volume
9
Citation Number
12
Citation Start Page
2039
Citation End Page
2039
Appears in Collections:
Engineering > IT Convergence
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