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Ulsan Univ. Repository Journal Papers Engineering IT Convergence

Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-layer Al2O3 and Bi-layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress

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Issued Date: 2020

Type: Article

Keyword: InGaAs MOSFET; atomic layer deposition (ALD); interfacial trap density (Dit); charge trapping; instability of electrical characteristics; transconductance (Gm) degradation; positive bias temperature (PBT) stress

DOI: 10.3390/electronics9122039

URI: https://oak.ulsan.ac.kr/handle/2021.oak/11439

Publisher: ELECTRONICS

Language: 영어

ISSN: 2079-9292

Citation Volume: 9

Citation Number: 12

Citation Start Page: 2039

Citation End Page: 2039

Appears in Collections:: Engineering > IT Convergence

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