Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-layer Al2O3 and Bi-layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress
- Publisher
- ELECTRONICS
- Language
- 영어
- ISSN
- 2079-9292
- Citation Volume
- 9
- Citation Number
- 12
- Citation Start Page
- 2039
- Citation End Page
- 2039
-
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- Engineering > IT Convergence
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