Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions
- Issued Date
- 2020
- Type
- Article
- Keyword
- ALD; border trap; high-k; interface trap; III–V semiconductors
- Publisher
- MATERIALS
- Language
- 영어
- ISSN
- 1996-1944
- Citation Volume
- 13
- Citation Number
- 24
- Citation Start Page
- 5809
- Citation End Page
- 5809
- Appears in Collections:
- Engineering > IT Convergence
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