Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs
- Publisher
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
- Language
- 영어
- ISSN
- 2168-6734
- Citation Volume
- 9
- Citation Number
- 1
- Citation Start Page
- 209
- Citation End Page
- 214
-
Appears in Collections:
- Engineering > IT Convergence
- 공개 및 라이선스
-
- 파일 목록
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.