Effect of Sputtering Pressure on the Nanostructure and Residual Stress of Thin-Film YSZ Electrolyte
- Abstract
- Solid oxide fuel cells are energy conversion devices that contribute to carbon neutrality, with the advantages of high efficiency, clean emissions production, and distributed power generation. However, the high operating temperature of the solid oxide fuel cells causes system stability and material selection problems. In this study, we aimed to lower the operating temperature of a solid oxide fuel cell by reducing the thickness of the electrolyte via sputtering. The deposition process was conducted under various pressure conditions to find the optimal sputtering process for a gas-tight YSZ thin-film electrolyte. The gas-tightness of the YSZ electrolytes was evaluated by observing the nanostructure and cell performance. As a result, the YSZ thin-film deposited at 3 mTorr showed the best gas-tightness and cell performance. At 500 °C, 1.043 V of OCV and a maximum power density of 1593 mW/cm2 were observed. Then, X-ray diffraction was used to calculate the residual stress of the YSZ films. As a result, it was confirmed that the gas-tight film showed compressive residual stress. Through this study, we were successful in developing a room-temperature YSZ electrolyte fabrication process with excellent gas-tightness and performance. It was also proven that there is a strong relationship between the gas-tightness and residual stress. This study is expected to contribute to cost reductions and the mass production of solid oxide fuel cells.
- Author(s)
- Yue Teng; Ho Yeon Lee; Haesu Lee; Yoon Ho Lee
- Issued Date
- 2022
- Type
- Article
- Keyword
- RF magnetron sputtering; thin film solid oxide fuel cell; yttria stabilized zirconia; sputtering pressure; residual stress
- DOI
- 10.3390/su14159704
- URI
- https://oak.ulsan.ac.kr/handle/2021.oak/15190
- Publisher
- SUSTAINABILITY
- Language
- 영어
- ISSN
- 2071-1050
- Citation Volume
- 14
- Citation Number
- 15
- Citation Start Page
- 1
- Citation End Page
- 9
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- Engineering > Engineering
- 공개 및 라이선스
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