ZnO/Ti/ZnO 박막의 결정성 및 전기광학적 완성도 개선 연구
- Alternative Title
- Enhancements of Crystallization and Opto-Electrical performance of ZnO/Ti/ZnO Thin Films
- Abstract
- Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films.
From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10-11 Ω-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10-5 Ω-1.
- Author(s)
- 장진규; 김유성; 이연학; 최진영; 이인식; 김대욱; 차병철; 공영민; 김대일
- Issued Date
- 2023
- Type
- Article
- Keyword
- ZnO; Ti; XRD; AFM; Figure of merit
- DOI
- 10.5695/JSSE.2023.56.2.147
- URI
- https://oak.ulsan.ac.kr/handle/2021.oak/15899
- Publisher
- 한국표면공학회지
- Language
- 한국어
- ISSN
- 1225-8024
- Citation Volume
- 56
- Citation Number
- 2
- Citation Start Page
- 147
- Citation End Page
- 151
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Appears in Collections:
- Engineering > Material Engineering
- 공개 및 라이선스
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