증착 후 전자빔 조사에 따른 IWO 박막의 전기적, 광학적 특성 개선 효과

Abstract

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In2O3 (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10-3 Ω-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10-3 Ω-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films.