Ti-Al-Si-Cu-N 후막의 Cu 조성에 따른 기계적 특성과 미세구조 변화에 관한 연구

Abstract

Quinary component of 3μm thick Ti-Al-Si-Cu-N films were deposited onto WC-Co and Si wafer substrates by using an arc ion plating(AIP) system. In this study, the influence of copper(Cu) contents on the mechanical properties and microstructure of the films were investigated. The hardness of the films with 3.1 at.% Cu addition exhibited the hardness value of above 42 GPa due to the microstructural change as well as the solid-solution hardening. The instrumental analyses revealed that the deposited film with Cu content of 3.1 at.% was a nano-composites with nano-sized crystallites (5–7 nm in dia.) and a thin layer of amorphous Si3N4 phase.