Electronic Structure and Magnetic Anisotropy Response of Janus Monolayer VSeTe

Abstract

Herein, the electronic and magnetic properties of the 2D Janus monolayer VSeTe are computed based on first‐principles calculations. The structure stability plays a crucial role in real application for magnetic devices; it is found that the VSeTe favors 2H structure due to non‐negative frequencies in the phonon spectra. The VSeTe monolayer possesses a semiconductor nature with a bandgap of 1.03 eV (0.85 eV) for spin‐up (down) channels. Interestingly, it is shown in the computed results that VSeTe monolayer is a magnetic semiconductor with a magnetic moment of 1.00 μB. Additionally, the realization of magnetic anisotropy energy can pave the way to utilize VSeTe monolayer for applications in magnetic semiconductor devices.