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Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

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Alternative Title
Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate
Abstract
In this study, we investigated the impact of intrinsic output conductance (goi) on the short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of fT using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for fT in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how fT was influenced by goi in HEMTs, emphasizing that the improvement in electrostatic integrity would also be of critical importance to fully benefit from scaling down Lg.
Author(s)
Hyo-Jin KimIn-Geun LeeHyeon-Bhin JoTae-Beom RhoTakuya TsutsumiHiroki SugiyamaHideaki MatsuzakiJae-Hak LeeTae-Woo KimDae-Hyun Kim
Issued Date
2023
Type
Article
Keyword
small-signal model (SSM)high-electron-mobility transistor (HEMT)cut-off frequency (fT)output conductance (go)
DOI
10.3390/electronics12020259
URI
https://oak.ulsan.ac.kr/handle/2021.oak/16896
Publisher
ELECTRONICS
Language
영어
ISSN
2079-9292
Citation Volume
12
Citation Number
2
Citation Start Page
1
Citation End Page
9
Appears in Collections:
Engineering > IT Convergence
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