Twisted grain boundary leads to high thermoelectric performance in tellurium crystals
- Alternative Title
- Twisted grain boundary leads to high thermoelectric performance in tellurium crystals
- Abstract
- Identifying an ideal microstructure for efficient thermoelectric materials has been complicated by the interplay between the electrical and thermal properties. The electrical properties of thermoelectric materials are often compromised to reduce lattice thermal conductivities and increase dimensionless thermoelectric figure-of-merit (zT). However, the increase in zT achieved using this strategy has recently stagnated. For example, elemental tellurium (Te) has exhibited a degraded zT of ∼1 for several years although it has gained considerable attention as a potential high-performance thermoelectric material. In this study, we demonstrate an unprecedentedly high zT of 1.42 at 623 K for 1% Fe2As-doped elemental Te crystals by utilizing the doping-induced twisting behavior of grain boundaries in Te. The unconventional twisted microstructure—twisted boundaries with aligned helical chains—enables an “electrically textured and thermally random” orientation. Therefore, the twisted Te crystal has a higher electrical conductivity and a comparable lattice thermal conductivity to the polycrystalline Te.
- Author(s)
- Stanley Abbey; Hanhwi Jang; Brakowaa Frimpong; Naveen Kumar; Woo Hyun Nam; Van Quang Nguyen; Jong Ho Park; Chien Viet Nguyen; Hosun Shin; Jae Yong Song; Su-Dong Park; Sunglae Cho; Chandan Bera; Jaimin Kang; Byong-Guk Park; Muath Al Malki; G. Jeffrey Snyder; Yeon Sik Jung; Ki-Ha Hong; Min-Wook Oh
- Issued Date
- 2023
- Type
- Article
- DOI
- 10.1039/d2ee02169b
- URI
- https://oak.ulsan.ac.kr/handle/2021.oak/17606
- Publisher
- Energy & Environmental Science
- Language
- 영어
- ISSN
- 1754-5692
- Citation Volume
- 16
- Citation Number
- 1
- Citation Start Page
- 125
- Citation End Page
- 137
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- Natural Science > Physics
- 공개 및 라이선스
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