[2.2]Paracyclophane을 사용한 패릴린-N 박막 증착의 속도론적 연구

Abstract

초고집적회로에서 층간 절연체로 사용을 위하여 ［2.2］paracyclophane으로부터 패릴린-N(parylene-N: PA-N) 박막을 20℃이하의 온도에서 증착하였다. 증착된 PA-N 박막의 두께는 3500-12000Å이었으며, 증착 속도는 20-70 Å/min이었다. PA-N 박막의 유전율은 2.7±0.05로 나타났다. 운반 기체 유속이나 증착 온도가 증가함에 따라 증착 속도가 감소한 반면, 증착 압력이 증가하는 경우에는 증착 속도가 증가하였다. 전구체 분해 온도가 600℃에서 증착 속도는 최대가 되었다. 전구체 분해 온도가 750℃이거나 증착 압력이 1 torr보다 높은 경우에는 기상에서의 입자 형성으로 인해 박막 표면이 조악하였다. PA-N 박막 성장은 p-xylylene 단량체의 응축이 율속 단계인 것으로 나타났다.

Parylene-N(PA-N) films for use as interlayer dielectrics in ULSI were deposited from［2.2］paracyclophane at temperatures below 20℃. The film thickness measured was 3500-12000Å and the growth rate was 20-70 Å/min. The dielectric constant of the PA-N films deposited was found to be 2.7±0.05. The deposition rate decreased with increasing carrier gas flow rate or deposition temperature, but it increased with increasing pressure. The deposition rate became a maximum at a precursor decomposition temperature of 600℃. The film surface became rough due to particle formation in the gas phase at a precursor decomposition temperature of 750℃ or at a deposition pressure above 1 torr. It was shown that the condensation of a p-xylylene monomer was a rate-limiting step in the growth of the PA-N films.

Parylene-N(PA-N) films for use as interlayer dielectrics in ULSI were deposited from［2.2］paracyclophane at temperatures below 20℃. The film thickness measured was 3500-12000Å and the growth rate was 20-70 Å/min. The dielectric constant of the PA-N films deposited was found to be 2.7±0.05. The deposition rate decreased with increasing carrier gas flow rate or deposition temperature, but it increased with increasing pressure. The deposition rate became a maximum at a precursor decomposition temperature of 600℃. The film surface became rough due to particle formation in the gas phase at a precursor decomposition temperature of 750℃ or at a deposition pressure above 1 torr. It was shown that the condensation of a p-xylylene monomer was a rate-limiting step in the growth of the PA-N films.