UV/Cl₂(g)에 의한 Si-wafer 표면금속 오염물의 건식세정에 관한 연구

Abstract

본 연구에서는 실리콘 웨이퍼 표면에 존재하는 미량의 Zn, Fe, Ti 금속 오염물들이 UV-excited chlorine radical을 이용한 건식세정 방법으로 제거되는 반응과정을 연구 하였다. 실리콘 웨이퍼 상에 진공증착법으로 원형패턴이 있는 Zn, Fe, Ti 박막을 증착시켜 상온 및 200℃에서 UV/CI₂세정하였을 때, 염소 래디컬(CI＊)이 Fe, Zn, Ti와 반응하여 제거되는 것을 반응 전후 광학현미경과 SEM을 통해 표면 형상 변화를 관찰하였고, in-line으로 연결된 XPS를 통해서 반응 후 웨이퍼 표면에 남아있는 화합물의 화학적 결합상태를 관찰하였으며, UV/CI₂세정 후 실리콘 기판이 손상받는 정도를 알기 위해 AFM으로 표면 거칠기를 측정하였다. 광학현미경과 SEM의 분석에 의하면 Zn와 Fe는 쉽게 제거되는 반면 염화물을 형성하기 보다는 휘발성이 적은 산화물을 형성하는 경향이 강한 Ti은 약간만 제거되는 것을 확인하였다. XPS 분석을 통해서 이들 금속 오염물들이 chlorine radical과 반응하여 웨이퍼 표면에 금속 염화물을 형성하고 있는 것을 확인하였고, UV/CI₂세정처리를 하였을 때 실리콘 웨이퍼의 표면 거칠기가 약간 증가하는 것을 알 수 있었다. 지금까지의 결과를 통해 볼 때, 습식세정과 UV/CI₂건식세정을 병행하면 플라즈마 및 레이저를 사용하는 다른 건식세정 방법에 비하여 보다 저온에서 실리콘 기판의 큰 손상 없이 비교적 용이하게 금속 오염물을 제거할 수 있음을 알수 있었다.

The reaction mechanisms of dry cleaning of Zn, Fe and Ti trace contaminants on the Si wafer using UV/CI₂ have been studied by SEM, AFM and XPS analyses. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning using CI₂and UV/CI₂at 200℃ were studied by optical microscopy and SEM. In addition changes in surface roughness of Si wafer by the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/CI₂at elevated temperature of 200℃. It was also found that the surface roughness of the Si wafer increased after CI₂and UV/CI₂cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature by continuous processes of wet cleaning followed by UV/CI₂dry cleaning.

The reaction mechanisms of dry cleaning of Zn, Fe and Ti trace contaminants on the Si wafer using UV/CI₂ have been studied by SEM, AFM and XPS analyses. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning using CI₂and UV/CI₂at 200℃ were studied by optical microscopy and SEM. In addition changes in surface roughness of Si wafer by the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/CI₂at elevated temperature of 200℃. It was also found that the surface roughness of the Si wafer increased after CI₂and UV/CI₂cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature by continuous processes of wet cleaning followed by UV/CI₂dry cleaning.