硅素 積層成長技術과 그 應用에 관하여

Abstract

硅素 積層成長의 技術과 그 部品에 對한 應用에 관하여 조사 연구하였다.

여러 가지 化學反應工程이 硅素積層成長에 利用된다. 그중 몇가지 工程은 特別한 技術的 難點이 있거나 限定된 收率밖에 얻을 수 없어 實際 生産에는 利用되지 못하고 있다. 가장 넓게 利用되는 세가지 工程은 barrel型 反應器속에서 SiHCl₃와 SiCl₃의 水素還元工程과 SiH₄의 熱分解工程이다.

최근에는 低溫의 薄膜 多結晶成長에 상당한 硏究動向을 보이고 있고, 積層成長硅素는 넓은 接合面을 갖는 電力用, imformation用, imaging用 部品들의 製造에 넓게 利用되고 있다.

A brief survey is presented describing the technology and application of silicon epitaxial growth.

There are several chemical reactions and deposition systems which have been used to grow silicon epitaxially. Some of these prcesses present particular technical difficulties or have limited yield. The three processes most widely used employ the reduction of SiCl₄or SiHCl₃with hydrogen and the pyrolitic decomposition of SiH₄in the barrel type reactor.

Emphasis has also been placed recently on the production of thin polycrystalline layers at low temperature.

Epitaxial growth silicon has been widely used to manufacture power, information and imaging devices with large area junction.

A brief survey is presented describing the technology and application of silicon epitaxial growth.

There are several chemical reactions and deposition systems which have been used to grow silicon epitaxially. Some of these prcesses present particular technical difficulties or have limited yield. The three processes most widely used employ the reduction of SiCl₄or SiHCl₃with hydrogen and the pyrolitic decomposition of SiH₄in the barrel type reactor.

Emphasis has also been placed recently on the production of thin polycrystalline layers at low temperature.

Epitaxial growth silicon has been widely used to manufacture power, information and imaging devices with large area junction.