半導體內의 1價이온不純物의 에너지準位에 관한 硏究

Abstract

Ⅳ族 半導體內에 있는 1價로 이온화된 不純物이 勵起狀態에서 外力을 받았을때 에너지分離와 相對强度를 理論的으로 硏究한다. 群論을 適用해서 주어진 吸收線의 應力에의한 相對强度를 求한다.

? 遷移의 成分比는 두개의 實數 parameter에 관계됨을 안다. 하나는 〈111〉의 單一軸方向으로 壓?援퓸珦뻑㎱? 量으로 結定되고, 다른하나는 〈100〉와 〈110〉로 壓縮되었을때 結定된다.

This paper presents a theoretical Study of the relative intensities and energy splittings of the excitation lines fo a single-hole acceptor in a group-ⅣSemiconductor. Group theoretical methods are used to give the relative intensities of the stress-induced components of a given absorption line. The theory reveals that the ratios of the intensities fo the components of a ? transition depend upon two real parameters. One of these parameters may be determined unambiguously from a measurement with uniaxial compression along a <111> direction. The magnitude of the other may be found from measurements with compression parallel to <100> and <110>.

This paper presents a theoretical Study of the relative intensities and energy splittings of the excitation lines fo a single-hole acceptor in a group-ⅣSemiconductor. Group theoretical methods are used to give the relative intensities of the stress-induced components of a given absorption line. The theory reveals that the ratios of the intensities fo the components of a ? transition depend upon two real parameters. One of these parameters may be determined unambiguously from a measurement with uniaxial compression along a <111> direction. The magnitude of the other may be found from measurements with compression parallel to <100> and <110>.