AgGa(0.8)In(0.2)Se₂結晶의 光傳導度

Abstract

四元化合物AgGa0·8In0·2Se₂結晶을 Slow directional solidification method로 생장시켰다. 생장된 시료의 構造는 chalcopyrite구조이었으며, 格子常數는 a0=6.012A, c0=11.707A이었다.

또한, 이 試料의 光傳導度 測定으로부터 50K-250K 溫度領域에서 peak A의 溫度係數는 1.1×10 eV/K(50-150K), -1.2×10 eV/K(150-250K)이었으며, peak B의 溫度係數는 -9.9×10 eV/K(50-250K)이었다.

Ingots of AgGa??In??Se₂crystals were prepared by slow directional solidification method. The structure of grown sample was a chalcopyrite structure, and lattice constants were a =6.012 A, c =11.707A.

Also, the temperature coefficients which was obtained from photoconductivity measurements were 1.1×10 eV/K(50-150K), -1.2×10 eV/K(150-250K) for peak A and -9.9×10 eV/K(50-250K) for peak B.

Ingots of AgGa??In??Se₂crystals were prepared by slow directional solidification method. The structure of grown sample was a chalcopyrite structure, and lattice constants were a =6.012 A, c =11.707A.

Also, the temperature coefficients which was obtained from photoconductivity measurements were 1.1×10 eV/K(50-150K), -1.2×10 eV/K(150-250K) for peak A and -9.9×10 eV/K(50-250K) for peak B.