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AgGa(0.8)In(0.2)Se₂結晶의 光傳導度

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Alternative Title
The Photoconductivity of AgGa(0.8)In(0.2)Se₂
Abstract
四元化合物AgGa0·8In0·2Se₂結晶을 Slow directional solidification method로 생장시켰다. 생장된 시료의 構造는 chalcopyrite구조이었으며, 格子常數는 a0=6.012A, c0=11.707A이었다.

또한, 이 試料의 光傳導度 測定으로부터 50K-250K 溫度領域에서 peak A의 溫度係數는 1.1×10 eV/K(50-150K), -1.2×10 eV/K(150-250K)이었으며, peak B의 溫度係數는 -9.9×10 eV/K(50-250K)이었다.
Ingots of AgGa??In??Se₂crystals were prepared by slow directional solidification method. The structure of grown sample was a chalcopyrite structure, and lattice constants were a =6.012 A, c =11.707A.

Also, the temperature coefficients which was obtained from photoconductivity measurements were 1.1×10 eV/K(50-150K), -1.2×10 eV/K(150-250K) for peak A and -9.9×10 eV/K(50-250K) for peak B.
Ingots of AgGa??In??Se₂crystals were prepared by slow directional solidification method. The structure of grown sample was a chalcopyrite structure, and lattice constants were a =6.012 A, c =11.707A.

Also, the temperature coefficients which was obtained from photoconductivity measurements were 1.1×10 eV/K(50-150K), -1.2×10 eV/K(150-250K) for peak A and -9.9×10 eV/K(50-250K) for peak B.
Author(s)
嚴英浩
Issued Date
1984
Type
Research Laboratory
URI
https://oak.ulsan.ac.kr/handle/2021.oak/4867
http://ulsan.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002025144
Alternative Author(s)
Um, Young Ho
Publisher
연구논문집
Language
kor
Rights
울산대학교 저작물은 저작권에 의해 보호받습니다.
Citation Volume
15
Citation Number
2
Citation Start Page
399
Citation End Page
403
Appears in Collections:
Research Laboratory > University of Ulsan Report
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