Transport and Recombination Properties of Amorphous Silicon Films

Abstract

사일렌 기체를 글로우 방전으로 분해시켜 제작한 비정질 규소 박막들의 전류 이동도 및 전기 전도도, 그리고 광전기전도도를 측정하였다. 그 결과, doping되지 않은 시료의 경우엔 trap의 전자와 defect state의 양공이 주로 재결합하나, 인(phosphorus)이 doping된 시료의 경우엔 대부분의 전기전도는 donor band에서의 electron hopping에 의해 이루어지며 그 donor band의 전자와 defect state의 양공간의 재결합이 이루어짐을 알 수 있었다.

Drift mobility, conductivity, and intensity-dependent photoconductivity measurements were made on three a-Si films prepared differently by dc glow discharge decomposition of silane. The results suggested that the recombination of undoped samples takes place mainly between electrons in tail states and holes in defect states, while that of a P-doped sample whose transport is interpreted as phonon-assisted hopping in the donor band occurs between electrons in the donor band and holes in defect states.

Drift mobility, conductivity, and intensity-dependent photoconductivity measurements were made on three a-Si films prepared differently by dc glow discharge decomposition of silane. The results suggested that the recombination of undoped samples takes place mainly between electrons in tail states and holes in defect states, while that of a P-doped sample whose transport is interpreted as phonon-assisted hopping in the donor band occurs between electrons in the donor band and holes in defect states.