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Diffusion-controlled growth of Cu thin films electrodeposited directly on atomic-layer-deposited WC diffusion barrier for Cu interconnect

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Abstract
Direct copper (Cu) electrodeposition on a 10-nm atomic-layer-deposited (ALD) tungsten carbide (WC) diffusion barrier layer was investigated for building Cu interconnect in silicon (Si)-based microelectronic devices. The diffusion of Cu reducing species under potentiostatic Cu deposition was characterized according to applied cathodic potential in a neutral electrolyte with a concentration ratio of 1:10 for Cu to iminodiacetic acid (IDA) as a complexing agent. The diffusion-controlled nucleation and growth of Cu thin film on the ALD WC was figured out in relation to diffusion coefficients of Cu reducing species that were calculated from both modified current transient curves and more appropriately electrochemical impedance spectroscopy (EIS) analysis. At the end, the diffusion-controlled Cu fill of trenches with an aspect ratio of 6.3 and 15-nm bottom width was conducted by applying -1.4 V vs Ag/AgCl to an ALD-WC-covered, patterned Si wafer specimen.
Author(s)
김선정김수현윤홍민
Issued Date
2021
Type
Article
Keyword
AnalysisCu thin filmDielectric filmsDiffusion barrierDiffusion-controlled depositionElectrochemical reactionsElectrodepositionElectrolytesSiliconThin films
DOI
10.1016/j.mee.2021.111613
URI
https://oak.ulsan.ac.kr/handle/2021.oak/8989
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_gale_infotracacademiconefile_A673880925&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Diffusion-controlled%20growth%20of%20Cu%20thin%20films%20electrodeposited%20directly%20on%20atomic-layer-deposited%20WC%20diffusion%20barrier%20for%20Cu%20interconnect&offset=0&pcAvailability=true
Publisher
MICROELECTRONIC ENGINEERING
Location
네덜란드
Language
영어
ISSN
0167-9317
Citation Volume
248
Citation Number
1
Citation Start Page
111613
Citation End Page
111613
Appears in Collections:
Engineering > Material Engineering
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