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Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs

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Alternative Title
Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs
Abstract
We investigated the impact of a sulfur passivation (S-passivation) process step on carrier
transport properties of surface-channel In0.7Ga0.3As quantum-well (QW) Metal-Oxide-Semiconductor
Field-Effect-Transistors (MOSFETs) with source/drain (S/D) regrowth contacts. To do so, we fabricated
long-channel In0.7Ga0.3As QW MOSFETs with and without (NH4)2S treatment prior to a deposition of
Al2O3/HfO2 = 1-nm/3-nm by atomic-layer-deposition (ALD). The devices with S-passivation exhibited
a lower value of subthreshold-swing (S) = 74 mV/decade and more positive shift in the threshold voltage
(VT) than those without S-passivation. From the perspective of carrier transport, S-passivated devices
displayed excellent effective mobility (μeff ) in excess of 6,300 cm2/V·s at 300 K. It turned out that
the improvement of μeff was attributed to reduced Coulombic and surface-roughness scatterings. Using
a conductance method, a fairly small value of interface trap density (Dit) = 1.56 × 1012 cm?2eV?1 was
obtained for the devices with S-passivation, which was effective in mitigating the Coulombic scattering
at the interface between the high-k dielectric layer and the In0.7Ga0.3As surface-channel layer.
Author(s)
김대현김준규김태우이인군조현빈
Issued Date
2021
Type
Article
Keyword
carrier scattering mechanismeffective mobilityFrequency measurementinterface trap densityIn₀.₇Ga₀.₃AsLogic gatesMOSFETPassivationScatteringSulfurVoltage measurement
DOI
10.1109/JEDS.2021.3056689
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9051
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_doaj_primary_oai_doaj_org_article_8cea47dd5f99471b870fdbdb21eac9ed&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Impact%20of%20Sulfur%20Passivation%20on%20Carrier%20Transport%20Properties%20of%20In0.7Ga0.3As%20Quantum-Well%20MOSFETs&offset=0&pcAvailability=true
Publisher
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Location
미국
Language
영어
ISSN
2168-6734
Citation Volume
9
Citation Number
1
Citation Start Page
209
Citation End Page
214
Appears in Collections:
Engineering > IT Convergence
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