Trap Characterization of Atomic-Layer-Deposited Al Incorporated HfO2 films on In0.53Ga0.47As
- Alternative Title
- Trap Characterization of Atomic-Layer-Deposited Al Incorporated HfO2 films on In0.53Ga0.47As
- Abstract
- Trap Characterization of Atomic-Layer-Deposited Al Incorporated HfO2 films
on In0.53Ga0.47As
- Issued Date
- 2021
- Type
- Article
- URI
- https://oak.ulsan.ac.kr/handle/2021.oak/9083
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_crossref_primary_10_1021_acsaelm_1c00565&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Trap%20Characterization%20of%20Atomic-Layer-Deposited%20Al%20Incorporated%20HfO2%20films%20on%20In0.53Ga0.47As&offset=0&pcAvailability=true
- Publisher
- ACS APPLIED ELECTRONIC MATERIALS
- Location
- 미국
- Language
- 영어
- ISSN
- 2637-6113
- Citation Volume
- 3
- Citation Number
- 10
- Citation Start Page
- 4398
- Citation End Page
- 4408
- Appears in Collections:
- Engineering > IT Convergence
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