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Trap Characterization of Atomic-Layer-Deposited Al Incorporated HfO2 films on In0.53Ga0.47As

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Publisher
ACS APPLIED ELECTRONIC MATERIALS
Location
미국
Language
영어
ISSN
2637-6113
Citation Volume
3
Citation Number
10
Citation Start Page
4398
Citation End Page
4408
Appears in Collections:
Engineering > IT Convergence
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