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Investigation of Mean-Time-to-Failure Measurements from AlGaN/GaN High-Electron-Mobility Transistors Using Eyring Model

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Alternative Title
Investigation of Mean-Time-to-Failure Measurements from AlGaN/GaN High-Electron-Mobility Transistors Using Eyring Model
Abstract
We present the mean-time-to-failure (MTTF) calculations for AlGaN/GaN high-electronmobility transistors (HEMTs) using two independent acceleration factors. MTTF predictions are
generally calculated through the Arrhenius relationship, based on channel temperature and acceleration, depend only on one parameter. Although the failure modes of the AlGaN/GaN HEMTs
depend largely on the applied electric fields, the Eyring model is introduced to investigate both
voltage and temperature dependent degradation of AlGaN/GaN devices. In anticipation of adequate
MTTF values, studies were conducted on non-commercial devices. Further, we distinguished the
cumulative failure percentages through the Weibull and log-normal distributions. We also explored
the increase in gate leakage
Author(s)
김태우차크라볼티 수라지트
Issued Date
2021
Type
Article
Keyword
AlGaN/GaNarrhenius lawchannel temperatureeyring modelmean-time-to-filure(MTTF)stress
DOI
10.3390/electronics10243052
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9100
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_doaj_primary_oai_doaj_org_article_603b773187da470cbc2f945ebd53311e&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Investigation%20of%20Mean-Time-to-Failure%20Measurements%20from%20AlGaN%2FGaN%20High-Electron-Mobility%20Transistors%20Using%20Eyring%20Model&offset=0&pcAvailability=true
Publisher
ELECTRONICS
Location
스위스
Language
영어
ISSN
2079-9292
Citation Volume
10
Citation Number
24
Citation Start Page
3052
Citation End Page
3052
Appears in Collections:
Engineering > IT Convergence
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