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Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection

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Abstract
Hot carrier injection (HCI), occurring when the horizontal electric field is strongly applied, usually affects the degradation of nanoelectronic devices. In addition, metal contacts play a significant role in nanoelectronic devices. In this study, Schottky contacts in multilayer tungsten diselenide (WSe2) field-effect transistors (FETs) by hot carrier injection (HCI), occurring when a high drain voltage is applied, is investigated. A small number of hot carriers with high energy reduces the Schottky barrier height and improves the performance of FETs effectively rather than damaging the channel. Thermal annealing at the end of the fabrication process increases device performance by causing interfacial reactions of the source/drain electrodes. HCI causes a significant enhancement in the local asymmetry, especially in the subthreshold region. The subthreshold swing (SS) of the thermally annealed FETs is significantly improved from 9.66 to 0.562 V dec(-1) through the energy of HCI generated by a strong horizontal electric field. In addition, the contact resistances (R-SD), also called series resistances, extracted by a four-probe measurement and a Y-function method were also improved by decreasing to a 10th through the energy of HCI. To understand the asymmetrical characteristics of the channel after the stress, we performed electrical analysis, electrostatic force microscopy (EFM), and Raman spectroscopy.
Author(s)
김규태김도윤김연수신진우이국진이재우이혜빈조영훈주민규지현진
Issued Date
2021
Type
Article
Keyword
Schottky barrierWSe2field-effect transistorhot carrier injectionmetal contacts
DOI
10.1021/acsami.0c18319
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9488
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_pubmed_primary_33410320&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Metal-Contact%20Improvement%20in%20a%20Multilayer%20WSe2%20Transistor%20through%20Strong%20Hot%20Carrier%20Injecti&offset=0&pcAvailability=true
Publisher
ACS APPLIED MATERIALS INTERFACES
Location
미국
Language
영어
ISSN
1944-8244
Citation Volume
13
Citation Number
2
Citation Start Page
2829
Citation End Page
2835
Appears in Collections:
Natural Science > ETC
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