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Carrier control in CuAgSe by growth process or doping

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Alternative Title
Carrier control in CuAgSe by growth process or doping
Abstract
CuAgSe is a promising thermoelectric material whose p-type and n-type thermoelectric figure of merit,
ZT, values are relatively high (0.95 and 0.70, respectively). It exhibits native n-type conduction, while p-type conduction is present in non-stoichiometric CuAgSe. Here, we report that the carrier type in CuAgSe semiconductors can be effectively controlled by changing the growth process or doping. We were able to switch the carrier type of CuAgSe from the native n-type to the non-stoichiometric p-type by increasing the soaking time during growth. In contrast, the n-type conduction was always observed when Ni, Co, and Zn were doped into the host lattices. We obtained a maximum ZT value of 0.69 at 623 K in undoped n-type CuAgSe. Zn is a promising dopant for n-type CuAgSe with a ZT value of 0.68 at 623 K, which can be further optimized. Our work provided a simple and effective technique for producing both single-phase n- and p-type CuAgSe.
Author(s)
웬 티 흐엉Nguyen Van Quang팜 안 뚜언박종호이지은이재기박수동조성래
Issued Date
2021
Type
Article
Keyword
CuAgSeThermoelectricSemiconductorDopingCompatibility factorSoaking time
DOI
10.1016/j.jallcom.2020.157094
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9491
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_crossref_primary_10_1016_j_jallcom_2020_157094&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Carrier%20control%20in%20CuAgSe%20by%20growth%20process%20or%20doping&offset=0&pcAvailability=true
Publisher
JOURNAL OF ALLOYS AND COMPOUNDS
Location
스위스
Language
영어
ISSN
0925-8388
Citation Volume
852
Citation Number
1
Citation Start Page
157094
Citation End Page
157094
Appears in Collections:
Natural Science > Physics
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