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Growth and thermal stability studies of layered GaTe single crystals in inert atmospheres

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Alternative Title
Growth and thermal stability studies of layered GaTe single crystals in inert atmospheres
Abstract
In this study, we investigated the thermal stability properties in inert atmospheres of GaTe single crystals
fabricated by a temperature gradient technique. The obtained crystals possess a monoclinic layered structure with
high crystalline quality. To explore the thermal stability of GaTe, the differential scanning calorimetry (DSC) and
thermogravimetric analysis (TGA) were performed up to 1173 K in N2 and Ar atmospheres. GaTe crystals are
thermally stable up to 700 K in Ar and stable up to 935 K in N2 due to the protective role of the physically
adsorbed N2 molecules on GaTe surface. Annealing effect on the structural and optical properties of GaTe were
examined after thermal treatment in N2 atmosphere at different temperatures; 573, 673, 773, and 873 K. Three
prominent Raman modes at 97 cm1 (Ag), 145 cm1 (Ag), and 158 cm1 (Bg) corresponding to the monoclinic
GaTe phase almost remained, suggesting no structural damage at elevated temperatures. Especially, the photoluminescence
(PL) intensity is improved as the annealing temperature increases and reaches a maximum at 673 K
owing to the enhancement in the GaTe crystallinity. Above 873 K, we observed a significant reduction in the PL
intensity, which is attributed to the vacancies induced by tellurium evaporation.
Author(s)
부 티 호아팜 안 뚜언웬반쾅웬 안 둑웬 쩐 타오 니응우엔 티민 하이김용수Van Tam Tran조성래
Issued Date
2021
Type
Article
Keyword
GaTeSingle crystalThermal stabilityThermogravimetric analysisAnnealing effect
DOI
10.1016/j.jssc.2021.121996
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9499
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_gale_infotracacademiconefile_A654058240&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Growth%20and%20thermal%20stability%20studies%20of%20layered%20GaTe%20single%20crystals%20in%20inert%20atmospheres&offset=0&pcAvailability=true
Publisher
JOURNAL OF SOLID STATE CHEMISTRY
Location
미국
Language
영어
ISSN
0022-4596
Citation Volume
296
Citation Number
1
Citation Start Page
121996
Citation End Page
121996
Appears in Collections:
Natural Science > Physics
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