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Highly oriented GeSe2 thin film growth using a facile low-vacuum annealing method

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Alternative Title
Highly oriented GeSe2 thin film growth using a facile low-vacuum annealing method
Abstract
Germanium diselenide (GeSe 2 ), a chalcogen-based wide-bandgap semiconductor, has recently attracted interest as a low-symmetry layered material with peculiar in-plane anisotropy. The excellent air stabil- ity of ultra-thin GeSe 2 flakes and impressive preliminary results for photodetection-based applications in the ultra-violet light region also make a new promising material in the field of optoelectronics. The throughput of thin GeSe 2 crystal production on compatible substrates, however, has been extremely low, and accordingly, an improvement is essential. Herein, we report the preparation of crystalline GeSe 2 thin films from non-crystalline continuous films of a Ge-Se mixture deposited on a-SiO 2 /Si substrates, and the crystal structure of the post-annealed thin films characterized by X-ray crystallography. Well-oriented crystalline grains with lateral sizes up to 50 μm were observed after an appropriate annealing procedure. This self-aligned growth could establish a facile approach for scaling-up production of oriented crystalline thin films of other Van der Waals layered materials besides GeSe2.
Author(s)
웬 안 프엉웬 안 둑조성래
Issued Date
2021
Type
Article
Keyword
CrystallizationGermanium diselenide (GeSe2)SemiconductorTextureThin films
DOI
10.1016/j.scriptamat.2021.113821
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9514
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_crossref_primary_10_1016_j_scriptamat_2021_113821&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Highly%20oriented%20GeSe2%20thin%20film%20growth%20using%20a%20facile%20low-vacuum%20annealing%20method&offset=0&pcAvailability=true
Publisher
SCRIPTA MATERIALIA
Location
영국
Language
영어
ISSN
1359-6462
Citation Volume
198
Citation Number
1
Citation Start Page
113821
Citation End Page
113821
Appears in Collections:
Natural Science > Physics
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