KLI

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Metadata Downloads
Abstract
Through time-dependent defect spectroscopy and low-frequency noise measurements, we investigate and characterize the differences of carrier trapping processes occurred by different interfaces (top/sidewall) of the gate-all-around silicon nanosheet field-effect transistor (GAA SiNS FET). In a GAA SiNS FET fabricated by the top-down process, the traps at the sidewall interface significantly affect the device performance as the width decreases. Compare to expectations, as the width of the device decreases, the subthreshold swing (SS) increases from 120 to 230mV/dec, resulting in less gate controllability. In narrow-width devices, the effect of traps located at the sidewall interface is significantly dominant, and the 1/f(2) noise, also known as generation-recombination (G-R) noise, is clearly appeared with an increased time constant (tau(i)). In addition, the probability density distributions for the normalized current fluctuations (Delta I-D) show only one Gaussian in wide-width devices, whereas they are separated into four Gaussians with increased in narrow-width devices. Therefore, fitting is performed through the carrier number fluctuation-correlated with mobility fluctuations model that separately considered the effects of sidewall. In narrow-width GAA SiNS FETs, consequently, the extracted interface trap densities (N-T) distribution becomes more dominant, and the scattering parameter (alpha(SC)) distribution increases by more than double.
Author(s)
이국진김연수이혜빈박소정이용우주민규지현진이재우전중구성문수조영훈김도윤최준희이재우전대영최성진김규태
Issued Date
2021
Type
Article
Keyword
defectgate-all-around field-effect transistor (GAA FET)interface trapslow-frequency noisetime-dependent defect spectroscopy (TDDS)
DOI
10.1088/1361-6528/abd278
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9518
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_iop_journals_10_1088_1361_6528_abd278&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Defect%20spectroscopy%20of%20sidewall%20interfaces%20in%20gate-all-around%20silicon%20nanosheet%20FET&offset=0&pcAvailability=true
Publisher
NANOTECHNOLOGY
Location
영국
Language
영어
ISSN
0957-4484
Citation Volume
32
Citation Number
16
Citation Start Page
165202
Citation End Page
165202
Appears in Collections:
Natural Science > Physics
Authorize & License
  • Authorize공개
Files in This Item:
  • There are no files associated with this item.

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.