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Bi-doped GaTe single crystals: Growth and thermoelectric properties

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Abstract
Here bismuth (Bi) was utilized to substitute Te sites to increase the hole concentration, thereby enhancing the thermoelectric performance of GaTe. Bi-doped GaTe single crystals have successfully been fabricated by a temperature gradient technique. Bi atoms acting as acceptors helped to increase hole concentration from 9.43 x 10(15) cm(3) for pristine GaTe to 0.63, 0.90, 1.20, and 1.63 x 10(17) cm(-3) for BGT-1, BGT-2, BGT-3, and BGT-4 single crystals, respectively. Moreover, the carrier mobility was increased up to 68.25 cm(2)V(-1)s(-)(1) due to the crystallinity improvement of GaTe. Consequently, the electrical conductivity and power factor (PF) reached the respective maximum values of 3.62 S cm(-1) and 1.21 1.1W cm(-1) K-2 at 500 K for BGT-4 crystals. Meanwhile, Bi doping less affected the thermal transport properties of GaTe single crystals. A peak zT of similar to 0.02 was achieved at 700 K for the BGT-4 sample.
Author(s)
부 티 호아팜 안 뚜언Nguyen Van Quang박종호박수동조성래
Issued Date
2021
Type
Article
Keyword
Carrier concentrationDopingElectric power productionElectric propertiesElectrical conductivityGallium telluridePhonon scatteringResearch institutesThermoelectricThermoelectricity
DOI
10.1016/j.jssc.2021.122155
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9532
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_gale_infotracacademiconefile_A659666560&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Bi-doped%20GaTe%20single%20crystals:%20Growth%20and%20thermoelectric%20properties&offset=0&pcAvailability=true
Publisher
JOURNAL OF SOLID STATE CHEMISTRY
Location
미국
Language
영어
ISSN
0022-4596
Citation Volume
298
Citation Number
1
Citation Start Page
122155
Citation End Page
122155
Appears in Collections:
Natural Science > Physics
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