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Self-selective ferroelectric memory realized with semimetalic graphene channel

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Alternative Title
Self-selective ferroelectric memory realized with semimetalic graphene channel
Abstract
A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending on the direction of spontaneous polarization (SP) in the underlying ferroelectric layer. This indicates that the memory state of FeRAM, specified by the SP direction of the ferroelectric layer, can be sensed unambiguously with transconductance measurements. With the proposed read-out method, it is possible to construct an array of ferroelectric memory cells in the form of a cross-point structure where the transconductance of a crossing cell can be measured selectively without any additional selector. This type of FeRAM can be a plausible solution for fabricating high speed, ultra-low power, long lifetime, and high density 3D stackable non-volatile memory.
Author(s)
정성철박진영김준형송원호조재형박현재공명강석형시라즈 무하마드김일원김태헌박기복
Issued Date
2021
Type
Article
Keyword
ferroelectricmemorygraphenecharge transport
DOI
10.1038/s41699-021-00272-7
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9542
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_doaj_primary_oai_doaj_org_article_8a8e9b1605bc4bb88c6e1386eeabfebf&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Self-selective%20ferroelectric%20memory%20realized%20with%20semimetalic%20graphene%20channel&offset=0&pcAvailability=true
Publisher
NPJ 2D MATERIALS AND APPLICATIONS
Location
독일
Language
영어
ISSN
2397-7132
Citation Volume
5
Citation Number
1
Citation Start Page
90
Citation End Page
90
Appears in Collections:
Natural Science > Physics
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