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Hole doping efect of ­MoS2 via electron capture of ­He+ ion irradiation

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Abstract
Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect
engineering of two-dimensional (2D) materials, we herein report another positive efect of lowenergy (100 eV) He+
ion irradiation: converting n-type MoS2 to p-type by electron capture through
the migration of the topmost S atoms. The electron capture ability via He+
ion irradiation is valid for
supported bilayer MoS2; however, it is limited at supported monolayer MoS2 because the charges
on the underlying substrates transfer into the monolayer under the current condition for He+
ion
irradiation. Our technique provides a stable and universal method for converting n-type 2D transition
metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy
He+
ion irradiation.
Author(s)
안창원한상욱윤원석김혜선김양희김대현류순민
Issued Date
2021
Type
Article
Keyword
2차원 물질표면개질n-to-p 타입 변환
DOI
10.1038/s41598-021-02932-6
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9545
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_doaj_primary_oai_doaj_org_article_5e857d8eb1e343058fe683cde7cc9e8f&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Hole%20doping%20efect%20of%20%C2%ADMoS2%20via%20electron%20capture%20of%20%C2%ADHe%2B%20%20ion%20irradiation&offset=0&pcAvailability=true
Publisher
SCIENTIFIC REPORTS
Location
독일
Language
영어
ISSN
2045-2322
Citation Volume
11
Citation Number
1
Citation Start Page
23590
Citation End Page
23590
Appears in Collections:
Natural Science > Physics
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