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Unconventional Hall effect in metal/semiconductor hybrid spintronic devices

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Abstract
We investigate the Hall resistance of metallic multilayers Ta/Cr/CoTb/Ta/Si. In addition to the anomalous Hall effect originating from the ferrimagnetic CoTb layer, the unconventional Hall effect (UHE) is observed in our multilayer samples. The UHE depends not only on the current and magnetic fields but also on the device geometry and temperature in a unique way. Our results suggest that the UHE does not originate from the spin-orbit torque driven magnetization tilting but occurs possibly due to thermionic emission and Lorentz force at the metal/Si interface, where the Schottky barrier is formed. We also find that the space-charge effect causes geometric dependence of the Hall resistance. The magnitude of UHE is sizable and linearly proportional to the longitudinal magnetic field, suggesting that the observed UHE is attractive to the magnetic-field sensing industry.
Author(s)
강준호박민규이수길김도형정세엽김상훈박병국김갑진
Issued Date
2021
Type
Article
DOI
10.1063/5.0064895
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9552
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_crossref_primary_10_1063_5_0064895&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Unconventional%20Hall%20effect%20in%20metal%2Fsemiconductor%20hybrid%20spintronic%20devices&offset=0&pcAvailability=true
Publisher
APPLIED PHYSICS LETTERS
Location
미국
Language
영어
ISSN
0003-6951
Citation Volume
119
Citation Number
11
Citation Start Page
112401
Citation End Page
112401
Appears in Collections:
Natural Science > Physics
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