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Effects of gallium and arsenic substitution on the electronic and magnetic properties of monolayer SnS

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Abstract
Monolayer tin sulphide (SnS) is an extraordinary two-dimensional material with semiconductor nature. We have explored the doping effects of Gallium (Ga) and Arsenic (As) atoms on the electronic and magnetic properties of monolayer SnS using first-principles calculations. We find that the doped system are energetically stable due to high binding energies. Both the dopants retain the semiconductor nature of monolayer SnS with a tuneable band gap. Interestingly, spin-polarization with magnetic moment of 1.00 mu (B) has been induced in both Ga- and As-doped monolayer SnS. Moreover, the realization of magnetic anisotropy energy (MAE) could pave a way to utilize Ga- and As-doped monolayer SnS for applications in magnetic semiconductor devices.
Author(s)
Hamid UllahMWaqas Iqbal알리 아사드N A Noor신영한Muhammad Junaid Iqbal KhanH I El Saeedy
Issued Date
2021
Type
Article
Keyword
electronic propertiesmagnetic propertiesmonolayer SnSnon-transition element
DOI
10.1088/1402-4896/ac0375
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9609
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_iop_journals_10_1088_1402_4896_ac0375&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Effects%20of%20gallium%20and%20arsenic%20substitution%20on%20the%20electronic%20and%20magnetic%20properties%20of%20monolayer%20SnS&offset=0&pcAvailability=true
Publisher
PHYSICA SCRIPTA
Location
영국
Language
영어
ISSN
0031-8949
Citation Volume
96
Citation Number
9
Citation Start Page
095803
Citation End Page
095803
Appears in Collections:
Natural Science > ETC
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