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Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor

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Abstract
We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.
Author(s)
Chaehyeon AhnYounghee ParkSeunghyun ShinJong-Guk AhnIntek SongYoungjoon An정재훈Chung Soo KimJee Hyeon KimJiwon BangDaehyun KimJaeyoon BaikHyunseob Lim
Issued Date
2021
Type
Article
Keyword
Thin filmsAdsorptionPrecursorsLayersMonolayers
DOI
10.1021/acsami.0c19591
URI
https://oak.ulsan.ac.kr/handle/2021.oak/9618
https://ulsan-primo.hosted.exlibrisgroup.com/primo-explore/fulldisplay?docid=TN_cdi_proquest_miscellaneous_2481663760&context=PC&vid=ULSAN&lang=ko_KR&search_scope=default_scope&adaptor=primo_central_multiple_fe&tab=default_tab&query=any,contains,Growth%20of%20Monolayer%20and%20Multilayer%20MoS2%20Films%20by%20Selection%20of%20Growth%20Mode:%20Two%20Pathways%20via%20Chemisorption%20and%20Physisorption%20of%20an%20Inorganic%20Molecular%20Precursor&offset=0&pcAvailability=true
Publisher
ACS APPLIED MATERIALS INTERFACES
Location
미국
Language
영어
ISSN
1944-8244
Citation Volume
13
Citation Number
5
Citation Start Page
6805
Citation End Page
6812
Appears in Collections:
Natural Science > Chemistry
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