Thermal MOCVD와 DC pulsed PA-MOCVD에 의해 증착된 TiN 박막 연구

Abstract

유기화합물(TDEAT;Ti[N(C2H5)2]4)과 NH3를 이용하여 thermal MOCVD와 dc pulsed plasma assisted MOCVD(PA-MOCVD)인 2종류의 TiN박막을 증착하여 비교하였다. TiN박막의 특성분석은 XRD, AES, FE-SEM, α-step과 XPS로 연구하였다. DC pulsed plasma assisted MOCVD로 증착된 Tin박막은 ion bombardment 효과에 의해 열적으로 증착된 것보다 더 fine한 columnar구조를 나타내므로써 막의 결정질이 향상되었다.

플라즈마에서의 아르곤 이온의 충돌로 인해 탄소(C)는 오히려 유기 화합물보다 탄소 라디칼로 존재하였다. 따라서 탄소 라디갈은 기판의 강한 (-) potential에 의해 TiN박막에 trap되기 때문에 탄소(C)는 열적으로 증착된 TiN박막보다 더 많은 양이 존재하는 것으로 추정된다.

By using of (TDEAT;Ti[N(C2H5)2]4)and ammonia gas source, we deposited two different TiN thin films with thermal MOCVD and dc pulsed plasma assisted MOCVD (PA-MOCVB). The properties of TiN thin films were studied by XRD, AES, FE - SEM, α - step and XPS analyses in this work. The TiN films deposited by dc pulsed PA - MOCVD have a little higher density and a fine columnar structure, compared with thermally deposited TiN thin films. This may be due to ion bombardment effect resulting in improved crystallinity in films. Carbon in the film may exist in the form of carbonic radical rather than organic compound because of collision with Ar ion in the plasma. Consequently, the content of carbon in the film of dc pulsed PA - MOCVD was higher than that in thermally deposited TiN films, because carbon radicals could be trapped in the film by strong negative potential of the substrate.

By using of (TDEAT;Ti[N(C2H5)2]4)and ammonia gas source, we deposited two different TiN thin films with thermal MOCVD and dc pulsed plasma assisted MOCVD (PA-MOCVB). The properties of TiN thin films were studied by XRD, AES, FE - SEM, α - step and XPS analyses in this work. The TiN films deposited by dc pulsed PA - MOCVD have a little higher density and a fine columnar structure, compared with thermally deposited TiN thin films. This may be due to ion bombardment effect resulting in improved crystallinity in films. Carbon in the film may exist in the form of carbonic radical rather than organic compound because of collision with Ar ion in the plasma. Consequently, the content of carbon in the film of dc pulsed PA - MOCVD was higher than that in thermally deposited TiN films, because carbon radicals could be trapped in the film by strong negative potential of the substrate.