비정질Si/결정질 Si Heterojunction의 J-V특성

Abstract

비정질 Si(a-Si)/ 결정질 Si(c-Si) heterojunction의 J-V특성을 조사하기 위하여 a-Si/C-Si/Pd heterojunction-Schottky barrier 복합체를 사용하였다.

a-Si은 약10 ??Torr의 진공속에서 다결정 Si을 진공증착시켜 제작하였으며 600K하에서 hydrogenation과 annealing처리가 되었다.

a-Si/c-Si hetherojunction의 J-V특성은 이중 Schottyky barrier model로 설명될 수 있으며 V=(kT/q)[β₁log(J/J?? +1)-β₂log(1-J/J ??)]의 식을 만족한다. 여기서 β₁과 β₂는 diode quality factor이다.

To investigate the J-V characteristics of amorphous Si(a-Si)/crystalline Si(c-Si) heterojunction, c-Si/a-Si/Pd heterojunction-Schottke barrier complexes were wused. a-Si films were fabricated by vacuum_~10 Torr) evaporation of polycrystalline Si and then hydrogenated and annealed at 600K.

The J-V characteristics of a-Si/c-Si heterojunction can be explained by double Schottky barrier model and is given V=(kT/q)[b₁log(J/J +1)-b₂log(1-J/J )], where b₁,b₂are diode quality factors.

To investigate the J-V characteristics of amorphous Si(a-Si)/crystalline Si(c-Si) heterojunction, c-Si/a-Si/Pd heterojunction-Schottke barrier complexes were wused. a-Si films were fabricated by vacuum_~10 Torr) evaporation of polycrystalline Si and then hydrogenated and annealed at 600K.

The J-V characteristics of a-Si/c-Si heterojunction can be explained by double Schottky barrier model and is given V=(kT/q)[b₁log(J/J +1)-b₂log(1-J/J )], where b₁,b₂are diode quality factors.