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진공증착된 비정질 규소의 상태밀도 결정

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Alternative Title
Determination of the Density of states of the vacuum evaporated a-Si
Abstract
진공증착된 비정질 규소는 Plasma deposition에 의해 제작된 시료보다 gap內에 局在化된 defect states가 많기 때문에 상온의 전기 전도도(σRT)가 크다. gap內의 상태밀도, N(ε),가 field effect실험에 의해 0.4eV<(ε??-ε)<0.9eV의 에너지 영역에서 결정되었다.

진공증착된 비정질 규소의 N(ε??)-ε??는 Fermi준위-가 10??㎝??eV??로 plasma deposition에 의해 제작된 시료보다 크게 나타났다. hydrogenation된 시료는 N(ε)가 낮게 나타났는데 T??=350℃에서 가장 작았다. N(ε)는 저온에서 variable range hopping의 여러가지 이론적인 모형에 대한 결과의 分析에 사용되었다.
The room temperature conductivity (σRT) of the evaporated a-Si is higher than that of the plasma deposited one, because of the many localized defect states in the gap. The density of states in the gap, N(ε), was determined in the energy range 0.4eV<(ε??-ε)<0.9eV using the field effect experiment. N(ε) of the evaporated a-Si, where ε?? is Fermi level, was about 10??㎝?? eV?? and was larger than that of plasma deposited sample. N(ε) was lowered by the hydrogenation and was minimized at T??=350℃. The knowledge of N(ε) was used in the analysis of the results of the variable range hopping at low temperature using various theoretical models.
The room temperature conductivity (σRT) of the evaporated a-Si is higher than that of the plasma deposited one, because of the many localized defect states in the gap. The density of states in the gap, N(ε), was determined in the energy range 0.4eV<(ε??-ε)<0.9eV using the field effect experiment. N(ε) of the evaporated a-Si, where ε?? is Fermi level, was about 10??㎝?? eV?? and was larger than that of plasma deposited sample. N(ε) was lowered by the hydrogenation and was minimized at T??=350℃. The knowledge of N(ε) was used in the analysis of the results of the variable range hopping at low temperature using various theoretical models.
Author(s)
이주열
Issued Date
1981
Type
Research Laboratory
URI
https://oak.ulsan.ac.kr/handle/2021.oak/4775
http://ulsan.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002024838
Alternative Author(s)
Rhee, Joo-Yull
Publisher
연구논문집
Language
kor
Rights
울산대학교 저작물은 저작권에 의해 보호받습니다.
Citation Volume
12
Citation Number
2
Citation Start Page
257
Citation End Page
261
Appears in Collections:
Research Laboratory > University of Ulsan Report
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