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Theoretical Interpretation of Field Effect Experiment of Amorphous Semiconductor

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Alternative Title
비정질 반도체의 장효과 실험의 이론적 고찰
Abstract
직류 글로우 방전에 의한 사일렌의 분해로 제작된 수소화된 비정질규소에 대한 장효과 실험결과를 a-SiFEF이론으로 해석해 보았다. 이론은 log ID-log(VF-VFB)?? 그래프가 직선이 될 것으로 예상하였는데 실험결과와 잘 일치하였다.
The field-effect-experiment data of the hydrogenated a-Si prepared by the glow discharge decomposition of silane was analyzed by the theoretical method of a-Si Field-Effect-Transister(FET) under assumption of exponential N(E).

The theory predicts that log ID-log(VF-VFB)curve becomes linear and the prediction and the experimental results are qualitatively in good agreements.
The field-effect-experiment data of the hydrogenated a-Si prepared by the glow discharge decomposition of silane was analyzed by the theoretical method of a-Si Field-Effect-Transister(FET) under assumption of exponential N(E).

The theory predicts that log ID-log(VF-VFB)curve becomes linear and the prediction and the experimental results are qualitatively in good agreements.
Author(s)
Rhee, Joo-Yull
Issued Date
1984
Type
Research Laboratory
URI
https://oak.ulsan.ac.kr/handle/2021.oak/5104
http://ulsan.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002025582
Alternative Author(s)
이주열
Publisher
연구논문집
Language
eng
Rights
울산대학교 저작물은 저작권에 의해 보호받습니다.
Citation Volume
15
Citation Number
2
Citation Start Page
389
Citation End Page
393
Appears in Collections:
Research Laboratory > University of Ulsan Report
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