Theoretical Interpretation of Field Effect Experiment of Amorphous Semiconductor

Abstract

직류 글로우 방전에 의한 사일렌의 분해로 제작된 수소화된 비정질규소에 대한 장효과 실험결과를 a-SiFEF이론으로 해석해 보았다. 이론은 log ID-log(VF-VFB)?? 그래프가 직선이 될 것으로 예상하였는데 실험결과와 잘 일치하였다.

The field-effect-experiment data of the hydrogenated a-Si prepared by the glow discharge decomposition of silane was analyzed by the theoretical method of a-Si Field-Effect-Transister(FET) under assumption of exponential N(E).

The theory predicts that log ID-log(VF-VFB)curve becomes linear and the prediction and the experimental results are qualitatively in good agreements.

The field-effect-experiment data of the hydrogenated a-Si prepared by the glow discharge decomposition of silane was analyzed by the theoretical method of a-Si Field-Effect-Transister(FET) under assumption of exponential N(E).

The theory predicts that log ID-log(VF-VFB)curve becomes linear and the prediction and the experimental results are qualitatively in good agreements.